J112-TR1 Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel JFETs

J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (T_A = 25_C UNLESS OTHERWISE NOTED)
J/SST111
Limits
J/SST112
J/SST113
Parameter
Symbol
Test Conditions
Typ^a Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current^b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
V_(BR)GSS
V_GS(off)
I_DSS
I_GSS
I_G
I_D(off)
r_DS(on)
V_GS(F)
I_G = –1 mA , V_DS = 0 V
V_DS = 5 V, I_D = 1 mA
V_DS = 15 V, V_GS = 0 V
V_GS = –15 V, V_DS = 0 V
T_A = 125_C
V_DG = 15 V, I_D = 10 mA
V_DS = 5 V, V_GS = –10 V
T_A = 125_C
V_GS = 0 V, V_DS = 0.1 V
I_G = 1 mA , V_DS = 0 V
–55
–35
–35
–35
V
–3 –10 –1
–5
–3
20
5
2
mA
–0.005
–1
–1
–1
nA
–3
–5
pA
0.005
1
1
1
nA
3
30
50
100 W
0.7
V
Common-Source Forward
Transconductance
Common-Source
Output Conductance
g_fs
6
V_DS = 20 V, I_D = 1 mA
f = 1 kHz
g_os
25
Drain-Source On-Resistance
r_ds(on)
V_GS = 0 V, I_D = 0 mA
f = 1 kHz
Common-Source
Input Capacitance
C_iss
7
V_DS = 0 V, V_GS = -10 V
Common-Source Reverse Transfer
Capacitance
C_rss
f = 1 MHz
3
Equivalent Input
Noise Voltage
e_n
V_DG = 10 V, I_D = 1 mA
f = 1 kHz
3
mS
mS
30
50
100 W
12
12
12
pF
5
5
5
nV⁄
√Hz
Switching
t_d(on)
2
Turn-On Time
t_r
V_DD = 10 V, V_GS(H) = 0 V
2
t_d(off)
See Switching Circuit
6
ns
Turn-Off Time
t_f
15
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
NCB
www.vishay.com
7-2
Document Number: 70232
S-04028—Rev. E, 04-Jun-01