J112-TR1 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel JFETs

J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
V_DS = 10 V
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
500
g_fs and g_os @ V_DS = 20 V
V_GS = 0 V, f = 1 kHz
40
10
I_D = 1 mA
30
g_fs
g_os
250
20
I_D = 10 mA
10
1
10
100
1k
10 k
100 k
f – Frequency (Hz)
10 nA
1 nA
100 pA
10 pA
1 pA
Gate Leakage Current
I_GSS @ 125_C
T_A = 125_C
I_D = 10 mA
1 mA
1 mA
T_A = 25_C
10 mA
I_GSS @ 25_C
0
0
–2
–4
–6
–8
V_GS(off) – Gate-Source Cutoff Voltage (V)
Common-Gate Input Admittance
100
V_DG = 10 V
I_D = 10 mA
T_A = 25_C
g_ig
0
–10
10
b_ig
1
0.1 pA
0
6
12
18
24
30
V_DG – Drain-Gate Voltage (V)
Common-Gate Forward Admittance
100
V_DG = 10 V
I_D = 10 mA
T_A = 25_C
–g_fg
b_fg
10
g_fg
1
0.1
100
200
500
f – Frequency (MHz)
1000
Common-Gate Reverse Admittance
10
V_DG = 10 V
I_D = 10 mA
T_A = 25_C
1.0
–b_rg
–g_rg
0.1
+g_rg
0.1
100
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7-4
200
500
f – Frequency (MHz)
1000
0.01
100
200
500
f – Frequency (MHz)
1000
Document Number: 70232
S-04028—Rev. E, 04-Jun-01