J112-TR1 Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel JFETs

J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
200
r_DS @ I_D = 1 mA, V_GS = 0
I_DSS @ V_DS = 20 V, V_GS = 0
80
160
On-Resistance vs. Drain Current
100
T_A = 25° C
80
60
r_DS
I_DSS
120
V_GS(off) = –2 V
60
40
80
20
40
0
0
–2
–4
–6
–8
V_GS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
I_D = 1 mA
r_DS changes X 0.7%/_C
160
0
–10
120
V_GS(off) = –2 V
80
–4 V
40
–8 V
0
–55 –35
–15 5 25 45 65
T_A – Temperature ( _C)
85 105 125
Turn-Off Switching
30
t_d(off) independent of device V_GS(off)
V_DD = 5 V, V_GS(L) = –10 V
24
40
20
0
1
5
4
3
2
–4 V
–8 V
10
100
I_D – Drain Current (mA)
Turn-On Switching
t_r approximately independent of I_D
V_DD = 5 V, R_G = 50 Ω
V_GS(L) = –10 V
t_r
t_d(on) @
I_D = 12 mA
1
t_d(on) @
I_D = 3 mA
0
0
30
24
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
f = 1 MHz
18
12
6
0
0
t_f @
V_GS(off) = –2 V
t_d(off)
t_f @
V_GS(off) = –8 V
2
4
6
8
10
I_D – Drain Current (mA)
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
18
12
6
0
0
C_iss @ V_DS = 0 V
C_rss @ V_DS = 0 V
–4
–8
–12
–16
–20
V_GS – Gate-Source Voltage (V)
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