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SI8402DB Datasheet, PDF (4/6 Pages) Vishay Siliconix – 20-V N-Channel 1.8-V (G-S) MOSFET
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Si8402DB
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.2
Single Pulse Power, Juncion-to-Ambient
80
0.1
ID = 250 mA
60
−0.0
−0.1
40
−0.2
20
−0.3
−0.4
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
rDS(on) Limited
IDM Limited
10
P(t) = 0.001
1
ID(on)
Limited
0.1
TA = 25_C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BVDSS Limited
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 72_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72657
S-32557—Rev. A, 15-Dec-03
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