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SI8402DB Datasheet, PDF (3/6 Pages) Vishay Siliconix – 20-V N-Channel 1.8-V (G-S) MOSFET | |||
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New Product
Si8402DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
2500
Capacitance
0.05
0.04
0.03
0.02
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.01
0.00
0
5
10
15
20
25
30
ID â Drain Current (A)
Gate Charge
5
VDS = 10 V
4
ID = 1 A
3
2
1
2000
Ciss
1500
1000
500
Coss
0
Crss
0
4
8
12
16
20
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
1.3
VGS = 4.5 V
ID = 1 A
1.2
1.1
1.0
0.9
0
0
4
8
12
16
20
Qg â Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
0.8
â50 â25 0
25 50 75 100 125 150
TJ â Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.08
10
TJ = 150_C
0.06
0.04
ID = 1 A
TJ = 25_C
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD â Source-to-Drain Voltage (V)
Document Number: 72657
S-32557âRev. A, 15-Dec-03
0.00
0
1
2
3
4
5
VGS â Gate-to-Source Voltage (V)
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