SI8402DB Datasheet, PDF (1/6 Pages) Vishay Siliconix – 20-V N-Channel 1.8-V (G-S) MOSFET

New Product
Si8402DB
Vishay Siliconix
20-V N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.037 @ V_GS = 4.5 V
20
0.039 @ V_GS = 2.5 V
0.043 @ V_GS = 1.8 V
I_D (A)
7.3
7.1
6.8
FEATURES
D TrenchFETr Power MOSFET
D New MICRO FOOTr Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
APPLICATIONS
D PA, Battery and Load Switch for Portable Devices
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8402
xxx
S
4
G
1
D
Device Marking: 8402
xxx = Date/Lot Traceability Code
Ordering Information: Si8402DB-T1
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Package Reflow Conditions^b
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
VPR
IR/Convection
I_D
I_DM
I_S
P_D
T_J, T_stg
7.3
5.3
5.9
4.3
30
2.3
1.2
2.77
1.47
1.77
0.94
−55 to 150
215
220
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Document Number: 72657
S-32557—Rev. A, 15-Dec-03
Symbol
R_thJA
R_thJF
Typical
35
72
16
Maximum
45
85
20
Unit
_C/W
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