SI8402DB Datasheet, PDF (2/6 Pages) Vishay Siliconix – 20-V N-Channel 1.8-V (G-S) MOSFET

Si8402DB
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 70_C
V_DS v 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 1 A
V_GS = 2.5 V, I_D = 1 A
V_GS = 1.8 V, I_D = 1 A
V_DS = 10 V, I_D = 1 A
I_S = 1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 1 A
f = 1 MHz
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_g = 6 W
I_F = 1 A, di/dt = 100 A/ms
Min
Typ
Max Unit
0.4
1.0
V
"100
nA
1
mA
5
5
A
0.031
0.037
0.033
0.039
W
0.035
0.043
12
S
0.8
1.2
V
17
26
2
nC
3.1
15
W
30
45
45
70
145
220
ns
75
115
30
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 5 thru 2 V
25
20
1.5 V
15
10
5
0
0
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2
1V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
30
25
20
15
10
T_C = 125_C
5
25_C
−55_C
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V_GS − Gate-to-Source Voltage (V)
Document Number: 72657
S-32557—Rev. A, 15-Dec-03