V23990-P824-F10-PM Datasheet, PDF (9/16 Pages) Vincotech – Compact and Low Inductance Design

Output Inverter
V23990-P824-F10-PM
datasheet
Figure 25
Safe operating area as a function
of collector-emitter voltage
I _C = f(V _CE)
10³
Output inverter IGBT
100u
10u
10²
10m
1m
100m
DC
10¹
Figure 26
Gate voltage vs Gate charge
V _GE = f(Q _g)
15
Output inverter IGBT
120V
480V
10
5
10⁰
10^-1₁₀₀
At
D=
T_h =
V _GE =
T_j =
10¹
single pulse
80
ºC
±15
V
T _jmax
ºC
10²
V CE (V)
10³
Figure 27
Output inverter IGBT
Short circuit withstand time as a function of
gate-emitter voltage
t _sc = f(V _GE)
12
11
10
9
8
7
6
5
4
3
2
1
0
10 10,5 11 11,5 12 12,5 13 13,5 14 14,5 15
V GE (V)
At
V _CE =
600
V
T_j ≤
150
ºC
0
0
100
200
300
400
500
Qg (nC)
At
I_C =
75
A
Figure 28
Output inverter IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
V _GE = f(Q _GE)
1500
1250
1000
750
500
250
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V _CE ≤
400
V
T_j ≤
150
ºC
copyright Vincotech
9
12 Aug. 2015 / Revision 4