V23990-P824-F10-PM Datasheet, PDF (4/16 Pages) Vincotech – Compact and Low Inductance Design

V23990-P824-F10-PM
datasheet
Output Inverter
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I _c)
5
4
3
2
Output inverter IGBT
E_off
E_off
E_on
E_on:
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
5
4
3
2
Output inverter IGBT
E_on
E_off
E_on
E_off
1
1
0
0
30
60
With an inductive load at
T_j =
V _CE =
V _GE =
25/150 °C
300
V
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
90
120
I C (A) ₁₅₀
0
0
4
8
With an inductive load at
T_j =
V _CE =
V _GE =
25/150 °C
300
V
±15
V
I_C =
75
A
12
16 ^R G^{( Ω )} 20
Figure 7
Output inverter IGBT
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
2,5
E_rec
2
Figure 8
Output inverter IGBT
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
2,5
2
1,5
1,5
E_rec
E_rec
1
1
E_rec
0,5
0,5
0
0
30
60
With an inductive load at
T_j =
V _CE =
V _GE =
25/150 °C
300
V
±15
V
R _gon =
4
Ω
90
120 ^I C ^(A) 150
0
0
4
8
With an inductive load at
T_j =
V _CE =
V _GE =
25/150 °C
300
V
±15
V
I_C =
75
A
12
16 ^R G^{( Ω )} 20
copyright Vincotech
4
12 Aug. 2015 / Revision 4