V23990-P824-F10-PM Datasheet, PDF (6/16 Pages) Vincotech – Compact and Low Inductance Design

V23990-P824-F10-PM
datasheet
Output Inverter
Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _c)
Output inverter FWD
12
10
Q_rr
Figure 14
Output inverter FWD
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
12
10
8
8
Q_rr
6
6
Q_rr
4
4
Q_rr
2
2
0
At ⁰
30
60
90
120
I C (A) ₁₅₀
0
0
4
8
At
At
T_j =
V _CE =
V _GE =
R _gon =
25/150 °C
300
V
±15
V
4
Ω
T_j =
V_R =
I_F =
V _GE =
25/150 °C
300
V
75
A
±15
V
12
16 ^R Gon ^{( Ω)} 20
Figure 15
Output inverter FWD
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _c)
150
Figure 16
Output inverter FWD
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
150
120
120
I_RRM
90
90
I_RRM
I_RRM
60
60
I_RRM
30
30
0
0
30
60
90
120 ^I C ^(A) 150
0
0
4
8
At
T_j =
V _CE =
V _GE =
R _gon =
25/150 °C
300
V
±15
V
4
Ω
At
T_j =
V_R =
I_F =
V _GE =
25/150 °C
300
V
75
A
±15
V
12
16 ^R Gon ^{( Ω )} 20
copyright Vincotech
6
12 Aug. 2015 / Revision 4