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| V23990-P824-F10-PM Datasheet, PDF (7/16 Pages) Vincotech – Compact and Low Inductance Design | |||
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Output Inverter
V23990-P824-F10-PM
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
6000
5000
Output inverter FWD
dI0/dt
dIrec/dt
4000
3000
2000
1000
Figure 18
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
7500
dI0/dt
dIrec/dt
6000
4500
3000
1500
0
0
30
60
At
Tj =
V CE =
V GE =
R gon =
25/150 °C
300
V
±15
V
4
â¦
90
120 I C (A) 150
0
0
4
8
At
Tj =
VR =
IF =
V GE =
25/150 °C
300
V
75
A
±15
V
12
16 R Gon ( â¦) 20
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
Output inverter FWD
100
100
10-1
10-2
10-5
At
D=
R = thJH
10-4
tp / T
1,01
10-3
K/W
IGBT thermal model values
R (K/W)
0,03
0,16
0,54
0,18
0,06
0,04
Tau (s)
9,8E+00
1,1E+00
1,8E-01
3,3E-02
5,8E-03
4,6E-04
10-2
10-1
R (K/W)
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100 t p (s)
1012
10-1
10-2
10-5
At
D=
R thJH =
10-4
tp / T
1,38
10-3
K/W
FWD thermal model values
R (K/W)
0,03
0,17
0,64
0,31
0,15
0,08
Tau (s)
9,9E+00
1,0E+00
1,4E-01
3,3E-02
6,2E-03
4,2E-04
10-2
10-1
R (K/W)
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
t p (s) 1012
copyright Vincotech
7
12 Aug. 2015 / Revision 4
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