V23990-P824-F10-PM Datasheet, PDF (5/16 Pages) Vincotech – Compact and Low Inductance Design

Figure 9
Typical switching times as a
function of collector current
t = f(I _C)
1
0,1
t_f
0,01
V23990-P824-F10-PM
datasheet
Output Inverter
Output inverter IGBT
t_doff
t_don
Figure 10
Typical switching times as a
function of gate resistor
t = f(R _G)
1
t_f
0,1
t_r
0,01
Output inverter IGBT
t_doff
t_don
t_r
0,001
0,001
0
30
60
90
120
IC (A) 150
0
4
8
With an inductive load at
T_j =
150
°C
V _CE =
300
V
V _GE =
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
With an inductive load at
T_j =
150
°C
V _CE =
300
V
V _GE =
±15
V
I_C =
75
A
12
16 R G ( Ω ) 20
Figure 11
Typical reverse recovery time as a
function of collector current
t _rr = f(I _c)
0,4
Output inverter FWD
Figure 12
Output inverter FWD
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,4
t_rr
0,3
0,3
t_rr
0,2
t_rr
0,2
t_rr
0,1
0,1
0
0
0
30
60
90
120
I C (A) ₁₅₀
0
4
8
12
16 ^R Gon ^{( Ω )} 20
At
T_j =
V _CE =
V _GE =
R _gon =
25/150 °C
300
V
±15
V
4
Ω
At
T_j =
V_R =
I_F =
V _GE =
25/150 °C
300
V
75
A
±15
V
copyright Vincotech
5
12 Aug. 2015 / Revision 4