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| V23990-P629-L48-PM Datasheet, PDF (9/20 Pages) Vincotech – Ultra fast switching frequency | |||
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V23990-P629-L48-PM V23990-P629-L48Y-PM
V23990-P629-L49-PM V23990-P629-L49Y-PM
datasheet
INPUT BOOST
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
5000
4000
dI0/dt
dIrec/dt
BOOST FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
10000
8000
dI0/dt
dIrec/dt
BOOST FWD
3000
6000
2000
4000
1000
2000
0
0
20
40
At
Tj =
V CE =
V GE =
R gon =
25/125 °C
700
V
±15
V
16
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
60
I C (A) 80
BOOST IGBT
0
0
16
32
48
At
Tj =
VR =
IF =
V GE =
25/125 °C
700
V
40
A
±15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
64 R Gon ( â¦) 80
BOOST FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
R th(j-s) =
tp / T
0,84
K/W
IGBT thermal model values
R (K/W)
1,07E-01
3,91E-01
2,23E-01
9,23E-02
2,99E-02
0,00E+00
Ï (s)
1,41E+00
1,88E-01
5,60E-02
1,12E-02
1,11E-03
0,00E+00
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
R th(j-s) =
tp / T
1,88
K/W
FWD thermal model values
R (K/W)
5,58E-02
1,47E-01
8,94E-01
4,33E-01
2,94E-01
5,99E-02
Ï (s)
6,96E+00
5,43E-01
7,92E-02
1,33E-02
3,03E-03
6,32E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-1
100
t p (s) 10110
copyright Vincotech
9
11 Sep. 2015 / Revision 3
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