V23990-P629-L48-PM Datasheet, PDF (11/20 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L48-PM V23990-P629-L48Y-PM
V23990-P629-L49-PM V23990-P629-L49Y-PM
datasheet
INPUT BOOST
Figure 25
Safe operating area as a function
of collector-emitter voltage
I _C = f(V _CE)
10³
BOOST IGBT
10²
10uS
10¹
100uS
10⁰
1mS
DC
10mS
10^-1
100mS
10⁰
10¹
10²
At
D=
T_S =
V _GE =
T_j =
single pulse
80
ºC
±15
V
T _jmax
ºC
10³
V CE (V)
Figure 27
Output inverter IGBT
Short circuit withstand time as a function of
gate-emitter voltage
t _sc = f(V _GE)
17,5
15
12,5
10
7,5
5
2,5
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V _CE =
1200
V
T_j ≤
150
ºC
Figure 26
Gate voltage vs Gate charge
V _GE = f(Q _g)
17,5
BOOST IGBT
15
240V
12,5
960V
10
7,5
5
2,5
0
0
25
At
I_C =
40
50
75
100
125
150
175
200
Qg (nC)
A
Figure 28
Output inverter IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
V _GE = f(Q _GE)
350
300
250
200
150
100
50
0
12
13
14
15
16
17
18
19
20
V GE (V)
At
V _CE ≤
1200
V
T_j =
150
ºC
copyright Vincotech
11
11 Sep. 2015 / Revision 3