V23990-P629-L48-PM Datasheet, PDF (6/20 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L48-PM V23990-P629-L48Y-PM
V23990-P629-L49-PM V23990-P629-L49Y-PM
datasheet
INPUT BOOST
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I _C)
10
BOOST IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
10
8
8
E_{on High T}
6
6
E_{on Low T}
E_{off High T}
4
4
E_{off Low T}
2
2
0
0
20
40
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
700
V
±15
V
R _gon =
16
Ω
R _goff =
16
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
0,008
60
I C (A) 80
BOOST FWD
0
0
16
32
48
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
700
V
±15
V
I_D =
40
A
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
0,008
BOOST IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
64
R _G ( Ω ) ⁸⁰
BOOST FWD
0,006
0,006
0,004
0,002
R (K⁰ /W)
0
20
40
With an inductive load at
T_j =
25/125 °C
V _CE =
700
V
V _GE =
±15
V
R _gon =
16
Ω
R _goff =
16
Ω
0,004
E_{rec High T}
0,002
E_{rec Low T}
E_{rec High T}
E_{rec Low T}
60
I C (A) 80
R
(K⁰/W)
0
16
32
48
64 _{R G( Ω )} 80
With an inductive load at
T_j =
25/125 °C
V _CE =
700
V
V _GE =
±15
V
I_C =
40
A
copyright Vincotech
6
11 Sep. 2015 / Revision 3