V23990-P629-L48-PM Datasheet, PDF (8/20 Pages) Vincotech – Ultra fast switching frequency

V23990-P629-L48-PM V23990-P629-L48Y-PM
V23990-P629-L49-PM V23990-P629-L49Y-PM
datasheet
INPUT BOOST
Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
0,08
0,06
0,04
BOOST FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
0,08
Q_{rr High T}
Q_{rr Low T}
0,06
0,04
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
0,02
0,02
0,00
At ⁰
20
40
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
700
V
±15
V
16
Ω
0,00
60
I C (A) 80
0
16
32
48
At
T_j =
VR =
IF =
V GS =
25/125 °C
700
V
40
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
20
BOOST FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
20
64 R Gon ( Ω) 80
BOOST FWD
16
16
12
8
4
0
0
20
40
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
700
V
±15
V
16
Ω
I_{RRM High T}
I_{RRM Low T}
60
I C (A) 80
12
8
I_{RRM High T}
4
I_{RRM Low T}
0
0
16
32
48
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
700
V
40
A
±15
V
64 R Gon (Ω) 80
copyright Vincotech
8
11 Sep. 2015 / Revision 3