V23990-P629-L48-PM Datasheet, PDF (1/20 Pages) Vincotech – Ultra fast switching frequency

flow BOOST 0
V23990-P629-L48-PM V23990-P629-L48Y-PM
V23990-P629-L49-PM V23990-P629-L49Y-PM
datasheet
1200 V / 40 A
Features
● High efficiency dual boost
● Ultra fast switching frequency
● Low Inductance Layout
● 1200V IGBT and 1200V SiC diode
flow 0 housing
Target Applications
● solar inverter
Schematic
Types
● V23990-P629-L48-PM
● V23990-P629-L48Y-PM
● V23990-P629-L49-PM
● V23990-P629-L49Y-PM
T _j=25°C, unless otherwise specified
Parameter
Bypass Diode (D7,D8)
Repetitive peak reverse voltage
Mean forward current
Surge (non-repetitive) forward current
I ²t-value
Power dissipation
Maximum Junction Temperature
Input Boost IGBT (T1,T2)
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V _RRM
I _FAV
I _FSM
I ²t
P _tot
T _jmax
T _j=T _jmax
t _p=10ms
T _j=T _jmax
V _CES
I_C
I _CRM
P _tot
V _GE
t _SC
V _CC
T _jmax
T _j=T _jmax
t _p limited by T _jmax
T _j≤150°C
V _CE<=V _CES
T _j=T _jmax
T _j≤150°C
V _GE=15V
T _s=80°C
T _j=150°C
T _s=80°C
T _s=80°C
T _s=80°C
Value
Unit
1600
V
34
A
200
A
200
A²s
42
W
150
°C
1200
V
41
A
120
A
80
A
113
W
±20
V
10
µs
800
V
175
°C
copyright Vincotech
1
11 Sep. 2015 / Revision 3