V23990-P629-F72-PM Datasheet, PDF (9/19 Pages) Vincotech – High efficiency dual boost

Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
10
8
6
4
2
0
0
At
15
30
45
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
125
100
75
50
25
0
0
15
30
45
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
15
V
4
Ω
INPUT BOOST
V23990-P629-F72-PM
datasheet
BOOST FWD
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
8
6
Q_{rr Low T}
4
2
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
0
60
I C (A) ⁷⁵
0
5
10
At
T_j =
VR =
IF =
V GS =
25/125 °C
600
V
40
A
15
V
15
R Gon ( Ω)
20
BOOST FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
125
100
75
50
25
BOOST FWD
I_{RRM High T}
I_{RRM Low T}
0
60
I C (A) ⁷⁵
0
5
10
At
T_j =
V_R =
I_F =
V _GS =
25/125 °C
600
V
40
A
15
V
15
R Gon ( Ω )
20
copyright Vincotech
9
12 Mar. 2015 / Revision 5