V23990-P629-F72-PM Datasheet, PDF (7/19 Pages) Vincotech – High efficiency dual boost

INPUT BOOST
V23990-P629-F72-PM
datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I _C)
4
3
2
1
BOOST IGBT
E_{on High T}
E_{off High T}
E_{on Low T}
E_{off Low T}
0
0
15
30
45
With an inductive load at
T_j =
V _DS =
25/125 °C
600
V
V _GS =
15
V
R _gon =
4
Ω
R _goff =
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E _rec = f(I _C)
5
4
60
75
I C (A)
BOOST IGBT
E_{rec High T}
3
E_{rec Low T}
2
1
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
0
5
10
With an inductive load at
T_j =
V _DS =
25/125 °C
600
V
V _GS =
15
V
I_D =
40
A
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
4
3
2
1
BOOST IGBT
E_{on High T}
E_{off High T}
E_{on Low T}
E_{off Low T}
15
R _G ( Ω ) 20
BOOST IGBT
E_{rec High T}
E_{rec Low T}
0
0
0
15
30
45
60
I C (A) 75
0
5
10
With an inductive load at
T_j =
V _DS =
V _GS =
R _gon =
25/125 °C
600
V
15
V
4
Ω
With an inductive load at
T_j =
V _DS =
V _GS =
I_D =
25/125 °C
600
V
15
V
40
A
15
R_G(Ω )
20
copyright Vincotech
7
12 Mar. 2015 / Revision 5