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| V23990-P629-F72-PM Datasheet, PDF (10/19 Pages) Vincotech – High efficiency dual boost | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
10000
dI0/dt
dIrec/dt
8000
6000
4000
2000
0
0
20
40
At
Tj =
V CE =
V GE =
R gon =
25/125 °C
600
V
15
V
4
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
INPUT BOOST
V23990-P629-F72-PM
datasheet
BOOST FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
10000
dI0/dt
dIrec/dt
8000
BOOST FWD
6000
4000
2000
60
I C (A) 80
BOOST IGBT
0
0
5
10
At
Tj =
VR =
IF =
V GS =
25/125 °C
600
V
40
A
15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
101
15
R Gon ( â¦) 20
BOOST FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
R thJH =
tp / T
0,65
K/W
IGBT thermal model values
R (K/W)
0,198
0,347
0,075
0,028
Tau (s)
0,495
0,111
0,015
0,001
copyright Vincotech
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
R thJH =
tp / T
1,48
K/W
FWD thermal model values
R (K/W)
0,050
0,121
0,335
0,489
0,283
0,123
0,081
Tau (s)
5,601
0,913
0,195
0,067
0,015
0,003
0,001
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
10
12 Mar. 2015 / Revision 5
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