V23990-P629-F72-PM Datasheet, PDF (8/19 Pages) Vincotech – High efficiency dual boost

Figure 9
Typical switching times as a
function of collector current
t = f(I _C)
1
t_doff
0,1
t_f
t_don
0,01
t_r
0,001
0
15
30
45
With an inductive load at
T_j =
125
°C
V _DS =
600
V
V _GS =
15
V
R _gon =
4
Ω
R _goff =
4
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t _rr = f(I _C)
0,4
0,3
0,2
0,1
0
0
15
30
45
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
600
V
15
V
4
Ω
INPUT BOOST
V23990-P629-F72-PM
datasheet
BOOST IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R _G)
1
t_doff
0,1
t_f
t_don
0,01
t_r
BOOST IGBT
60
I C (A)
75
0,001
0
5
10
With an inductive load at
T_j =
125
°C
V _DS =
600
V
V _GS =
15
V
I_C =
40
A
15
R G( Ω ) ²⁰
BOOST FWD
t_{rr High T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,5
0,4
BOOST FWD
t_{rr High T}
0,3
t_{rr Low T}
0,2
t_{rr Low T}
0,1
0
60
I C (A) ⁷⁵
0
5
10
At
T_j =
V_R =
I_F =
V _GS =
25/125 °C
600
V
40
A
15
V
15
R Gon ( Ω )
20
copyright Vincotech
8
12 Mar. 2015 / Revision 5