V23990-P629-F72-PM Datasheet, PDF (15/19 Pages) Vincotech – High efficiency dual boost

V23990-P629-F72-PM
datasheet
Switching Definitions BOOST IGBT
General conditions
T_j
R _gon
R _goff
= 125 °C
= 4Ω
= 4Ω
Figure 1
Boost IGBT
Turn-off Switching Waveforms & definition of t _doff, t _Eoff
(t _{E off} = integrating time for E _off)
125
%
t_doff
V_CE
100
V_{GE 90%}
V_{CE 90%}
75
I_C
50
t_Eoff
I_{C 1%}
25
0
-25
-0,2
V _GE (0%) =
V _GE (100%) =
V _C (100%) =
I _C (100%) =
t _doff =
t _{E off} =
V_GE
0
0,2
0
V
15
V
600
V
40
A
0,19
µs
0,56
µs
0,4
0,6
time (us)
Figure 2
Boost IGBT
Turn-on Switching Waveforms & definition of t _don, t _Eon
(t _{E on} = integrating time for E _on)
350
%
300
I_C
250
200
150
100
50
0
V_CE
V_GE10%
t_don
V_GE
I_{C 10%}
t_Eon
V_{CE 3%}
-50
2,95
3
3,05
3,1
V _GE (0%) =
V _GE (100%) =
V _C (100%) =
I _C (100%) =
t _don =
t _{E on} =
0
V
15
V
600
V
40
A
0,03
µs
0,15
µs
3,15
3,2
time(us)
Figure 3
Boost IGBT
Turn-off Switching Waveforms & definition of t _f
125
%
I_C
fitted
V_CE
100
I_{C 90%}
75
I_{C 60%}
50
I_{C 40%}
25
I_{C 10%}
0
t_f
Figure 4
Boost IGBT
Turn-on Switching Waveforms & definition of t _r
350
%
300
I_C
250
200
150
V_CE
100
50
0
t_r ^{IC 90%}
I_C10%
-25
0,05
0,1
0,15
V _C (100%) =
I _C (100%) =
t_f =
600
V
40
A
0,04
µs
0,2
0,25
time (us)
-50
2,95
3
3,05
V _C (100%) =
I _C (100%) =
t_r =
600
V
40
A
0,01
µs
3,1
3,15
time(us)
copyright Vincotech
15
12 Mar. 2015 / Revision 5