V23990-P628-F64-P1-14 Datasheet, PDF (9/15 Pages) Vincotech – 900V CoolMOS™ C3

V23990-P628-F64-PM
preliminary datasheet
Figure 21
Safe operating area as a function
of drain-source voltage
I_D = f(V_DS)
HALF BRIDGE
half bridge MOSFET
MOSFET
Figure 22
Gate voltage vs Gate charge
V_GS = f(Q_g)
10
MOSFET
10³
10uS
100uS
10²
100mS
10mS ^1mS
10¹
DC
10⁰
10^-1
10⁰
10¹
10²
10³
At
D=
Th =
V_DS =
T_j =
single pulse
80
ºC
10
V
T_jmax
ºC
8
180V
720V
6
4
2
V DS (V)
0
0
50
100
150
200
250
300
Q g (nC)
At
I_D =
36
A
Figure 23
Reverse bias safe operating area
I_D = f(V_DS)
80
70
I_{C MAX}
60
50
40
30
20
10
0
0
200
400
600
At
T_j =
T_jmax-25
U_ccminus=U_ccplus
Switching mode :
ºC
3phase SPWM
MOSFET
800
1000
V_DS(V)
Copyright by Vincotech
9
Revision: 1