V23990-P628-F64-P1-14 Datasheet, PDF (4/15 Pages) Vincotech – 900V CoolMOS™ C3

Figure 4
Typical switching energy losses
as a function of drain current
E = f(I_D)
25
20
15
10
5
0
0
10
20
30
With an inductive load at
T_j =
V_DS =
V_GS=
R_gon =
R_goff =
25/125 °C
400
V
10
V
8
Ω
8
Ω
Figure 6
Typical reverse recovery energy loss
as a function of drain current
E_rec = f(I_d)
4
3
2
V23990-P628-F64-PM
preliminary datasheet
HALF BRIDGE
half bridge MOSFET
MOSFET
Figure 5
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
15
E_{on High T}
12
E_{on Low T}
9
6
3
E_{off High T}
E_{off Low T}
0
40
50 _{I D (A)} 60
0
8
16
24
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
400
V
10
V
27
A
MOSFET
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
32
R G (Ω)
40
FWD
E_{rec Low T}
E_{rec High T}
Figure 7
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
4
E_{rec Low T}
3
E_{rec High T}
2
FWD
1
1
0
0
0
10
20
30
40
I D (A)
50
0
8
16
24
32 _{R G (Ω)}
40
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
10
V
R_gon =
8
Ω
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
10
V
I_F =
27
A
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