V23990-P628-F64-P1-14 Datasheet, PDF (5/15 Pages) Vincotech – 900V CoolMOS™ C3

Figure 8
Typical switching times as a
function of drain current
t = f(I_D)
1,00
0,10
t_f
0,01
t_r
V23990-P628-F64-PM
preliminary datasheet
HALF BRIDGE
half bridge MOSFET
MOSFET
Figure 9
Typical switching times as a
function of gate resistor
t = f(R_G)
10,00
t_doff
1,00
t_don
0,10
0,01
MOSFET
t_doff
t_don
t_f
t_r
0,00
0
10
20
30
With an inductive load at
T_j =
125
°C
V_DS =
400
V
V_GS =
10
V
R_gon =
8
Ω
R_goff =
8
Ω
Figure 10
Typical reverse recovery time as a
function of drain current
t_rr = f(I_d)
0,4
0,3
0,2
40
50
60
I D (A)
0,00
0
8
16
24
With an inductive load at
T_j =
125
°C
V_DS =
400
V
V_GS =
10
V
I_D =
27
A
FWD
t_{rr High T}
Figure 11
Typical reverse recovery time as a
function of MOSFET turn on gate resistor
t_rr = f(R_gon)
0,4
0,3
t_{rr Low T}
0,2
32
40
R G (Ω)
FWD
t_{rr High T}
t_{rr Low T}
0,1
0,1
0,0
0
10
20
30
40
50 _{I D (A)} 60
0,0
0
8
16
24
32
R gon (Ω) ⁴⁰
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
400
V
10
V
8
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
27
A
10
V
Copyright by Vincotech
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