V23990-P628-F64-P1-14 Datasheet, PDF (6/15 Pages) Vincotech – 900V CoolMOS™ C3

Figure 12
Typical reverse recovery charge as a
function of drain current
Q_rr = f(I_D)
50
40
30
20
10
0
0
At
10
20
30
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
400
V
10
V
8,0
Ω
Figure 14
Typical reverse recovery current as a
function of drain current
I_RRM = f(I_D)
250
200
150
100
50
0
0
10
20
30
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
400
V
10
V
8,0
Ω
V23990-P628-F64-PM
preliminary datasheet
HALF BRIDGE
half bridge MOSFET
FWD
Figure 13
Typical reverse recovery charge as a
function of MOSFET turn on gate resistor
Q_rr = f(R_gon)
40
Q_{rr High T}
Q_{rr Low T}
30
20
FWD
Q_{rr High T}
Q_{rr Low T}
10
0
40
I D (A) ⁵⁰
0
10
20
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
27
A
10
V
FWD
Figure 15
Typical reverse recovery current as a
function of MOSFET turn on gate resistor
I_RRM = f(R_gon)
250
200
I_{RRM Low T}
150
I_{RRM High T}
100
50
0
40
I D (A) ⁵⁰
0
10
20
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
27
A
10
V
30
R gon ( Ω)
40
FWD
I_{RRM Low T}
I_{RRM High T}
30
R gon (Ω)
40
Copyright by Vincotech
6
Revision: 1