V23990-P628-F64-P1-14 Datasheet, PDF (2/15 Pages) Vincotech – 900V CoolMOS™ C3

V23990-P628-F64-PM
preliminary datasheet
Parameter
H-Bridge MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
R_ds(on)
10
V_(GS)th
I_gss
20
I_dss
0
t_d(ON)
t_r
t_{d(OFF) Rgon=8 Ω}
10
t_f
Rgoff=8 Ω
E_on
E_off
Q_g
Q_gs
0
Q_gd
C_iss
C_oss f=1MHz
0
C_rss
R_thJH
R_thJC
Thermal grease
thickness≤50um
λ = 1 W/mK
36
Tj=25°C
Tj=125°C
149
269
mΩ
V_DS=V_GS 0,0029
Tj=25°C
Tj=125°C
2,5
3
3,5
V
0
Tj=25°C
Tj=125°C
100
nA
900
Tj=25°C
Tj=125°C
10000
nA
Tj=25°C
43
Tj=125°C
40
Tj=25°C
10
Tj=125°C
11
Tj=25°C
407
ns
400
27
Tj=125°C
Tj=25°C
418
20
Tj=125°C
23
Tj=25°C
9,49
Tj=125°C
Tj=25°C
11,56
2,64
mWs
Tj=125°C
2,55
270
400
26
Tj=25°C
32
nC
115
6800
25
Tj=25°C
330
pF
tbd.
0,74
K/W
0,49
R
ΔR/R R100=1486 Ω
P
B_(25/50) Tol. ±3%
B_(25/100) Tol. ±3%
Tj=25°C
22000
Ω
Tc=100°C
-5
+5
%
Tj=25°C
200
mW
Tj=25°C
2
mW/K
Tj=25°C
3950
K
Tj=25°C
3996
K
Tj=25°C
B
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