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V23990-K243-A-PM Datasheet, PDF (8/17 Pages) Vincotech – IGBT3 technology for low saturation losses
V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
5000
D1,D2,D3,D4,D5,D6,D7 FWD
4000
dIrec/dtLow T
dIrec/dtHigh T
3000
dIo/dtLow T
2000
di0/dtHigh T
1000
0
0
At
Tj =
VCE =
VGE =
Rgon =
50
25/125 °C
300
V
±15
V
8
Ω
dI0/dt
dIrec/dt
100
150
I C (A) 200
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
7500
6000
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
4500
3000
1500
0
0
8
16
At
Tj =
VR =
IF =
VGE =
25/125 °C
300
V
100
A
±15
V
24
R gon ( Ω ) 32
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
D1,D2,D3,D4,D5,D6,D7 FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
RthJH =
tp / T
0,62
K/W
IGBT thermal model values
Thermal grease
R (C/W) Tau (s)
0,04
6,5E+00
0,09
1,0E+00
0,23
2,0E-01
0,15
5,9E-02
0,07
1,2E-02
0,02
2,2E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100 t p (s)
101
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
RthJH =
tp / T
0,80
K/W
FWD thermal model values
Thermal grease
R (C/W) Tau (s)
0,08
2,9E+00
0,26
3,2E-01
0,33
8,4E-02
0,08
1,1E-02
0,05
7,9E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
t p (s)
101
Copyright by Vincotech
8
Revision: 3.1