V23990-K243-A-PM Datasheet, PDF (4/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I_C = f(V_CE)
300
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
Typical output characteristics
I_C = f(V_CE)
300
T1,T2,T3,T4,T5,T6,T7 IGBT
250
250
200
200
150
150
100
100
50
50
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
4
V CE (V)
5
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
125
°C
7 V to 17 V in steps of 1 V
4
V CE (V) 5
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
100
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
300
250
80
200
60
150
40
T_j = 25°C
100
20
T_j = T_jmax-25°C
50
0
0
0
2
4
6
8
10 V GE (V) 12
0
0,5
1
At
t_p =
250
µs
V_CE =
10
V
At
t_p =
250
µs
D1,D2,D3,D4,D5,D6,D7 FWD
T_j = 25°C
T_j = T_jmax-25°C
1,5
2
V F (V) 2,5
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4
Revision: 3.1