V23990-K243-A-PM Datasheet, PDF (7/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
20
Q_rr
16
T_j = T_jmax -25°C
12
Q_rr
8
4
T_j = 25°C
0
At ⁰
50
100
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
±15
V
8
Ω
150
I C (A)
200
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
15
12
T_j = T_jmax -25°C
Q_rr
9
T_j = 25°C
6
Q_rr
3
0
0
8
16
24
32
R g on ( Ω) 40
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
100
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
200
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
200
D1,D2,D3,D4,D5,D6,D7 FWD
150
100
I_RRM
50
I_RRM
T_j = T_jmax -25°C
T_j = 25°C
T_j = T_jmax - 25°C
150
100
T_j = 25°C
50
I_RRM
I_RRM
0
0
50
100
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
300
V
±15
V
8
Ω
0
150
I C (A) 200
0
8
16
24
32 R gon ( Ω ) 40
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
300
V
100
A
±15
V
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7
Revision: 3.1