V23990-K243-A-PM Datasheet, PDF (11/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K243-A-PM
D8,D9,D10,D11,D12,D13
Figure 1
Typical diode forward current as
a function of forward voltage
I_F= f(V_F)
150
D8,D9,D10,D11,D12,D13 diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
10¹
D8,D9,D10,D11,D12,D13 diode
120
10⁰
90
60
10^-1
30
T_j = T_jmax-25°C
T_j = 25°C
0
0,0
0,3
0,6
0,9
1,2
V F (V) 1,5
10^-2
10^-5
10^-4
10^-3
10^-2
At
At
t_p =
250
µs
D=
t_p / T
R_thJH =
0,90
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
t p (s)
10^-1
10⁰
10¹
Figure 3
Power dissipation as a
function of heatsink temperature
P_tot = f(T_h)
180
D8,D9,D10,D11,D12,D13 diode
Figure 4
Forward current as a
function of heatsink temperature
I_F = f(T_h)
150
D8,D9,D10,D11,D12,D13 diode
150
120
120
90
90
60
60
30
30
0
0
At
T_j =
30
60
150
ºC
0
90
120 T h ( ^o C) 150
0
30
60
At
T_j =
150
ºC
90
120 T h ( ^o C) 150
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Revision: 3.1