V23990-K243-A-PM Datasheet, PDF (5/17 Pages) Vincotech – IGBT3 technology for low saturation losses

V23990-K243-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
10
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
10
8
8
E_{on High T}
6
6
4
E_{off High T}
2
E_{on Low T}
0
0
50
100
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
300
V
±15
V
8
Ω
8
Ω
4
E_{off Low T}
2
150
I C (A)
200
0
0
8
16
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
300
V
±15
V
100
A
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
24
32
R G ( Ω ) 40
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
3,2
T1,T2,T3,T4,T5,T6,T7 IGBT
E_rec
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
3,2
T1,T2,T3,T4,T5,T6,T7 IGBT
2,4
2,4
T_j = T_jmax -25°C
E_rec
1,6
1,6
T_j = T_jmax -25°C
T_j = 25°C
0,8
T_j = 25°C
0,8
0
0
50
100
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
±15
V
R_gon =
8
Ω
0
150
I C (A)
200
0
8
16
24
With an inductive load at
T_j =
25/125 °C
V_CE =
300
V
V_GE =
±15
V
I_C =
100
A
E_rec
E_rec
32 R G ( Ω ) 40
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5
Revision: 3.1