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| V23990-K200-A40-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology | |||
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V23990-K200-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
500
dI0/dt
dIrec/dt
400
300
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
1750
1500
1250
1000
FWD
dI0/dt
dIrec/dt
750
200
500
100
250
0
0
5
10
15
20
25 I C (A) 30
0
0
25
50
75
100
125 R gon ( ⦠) 150
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
32
Û·
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
15
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,3
K/W
IGBT thermal model values
R (C/W)
0,08
0,57
0,36
0,22
0,12
Tau (s)
1,5E+00
1,6E-01
3,7E-02
7,8E-03
7,6E-04
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
101 10
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,92
K/W
FWD thermal model values
R (C/W)
0,04
0,21
0,85
0,46
0,25
0,11
Tau (s)
9,1E+00
6,2E-01
1,1E-01
2,2E-02
2,6E-03
4,7E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 101
Copyright by Vincotech
8
Revision: 4.1
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