V23990-K200-A40-PM Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K200-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
3
2,5
T_j = T_jmax -25°C
2
1,5
1
0,5
0
At ⁰
5
10
15
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
32
Û·
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
12
T_j = T_jmax -25°C
10
8
T_j = 25°C
6
4
2
0
0
5
10
15
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
32
Û·
FWD
Q_rr
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
3
2,5
T_j = T_jmax -25°C
2
T_j = 25°C
Q_rr
1,5
T_j = 25°C
1
0,5
20
25 I C (A) 30
0
0
25
50
75
100
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
15
A
±15
V
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
15
12
I_RRM
9
I_RRM
6
3
T_j = T_jmax - 25°C
T_j = 25°C
20
25 I C (A) 30
0
0
25
50
75
100
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
15
A
±15
V
FWD
Q_rr
Q_rr
125 R g on ( Ω) 150
FWD
I_RRM
I_RRM
125 R gon ( Ω ) 150
Copyright by Vincotech
7
Revision: 4.1