V23990-K200-A40-PM Datasheet, PDF (5/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K200-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
4
IGBT
E_{on High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
4
3
3
E_{off High T}
E_{on Low T}
2
2
E_{off Low T}
1
1
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0
0
5
10
15
20
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/150 °C
600
V
±15
V
32
Û·
32
Û·
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
1,2
1
T_j = T_jmax -25°C
0,8
0,6
T_j = 25°C
0,4
0,2
0
0
5
10
15
20
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
R_gon =
32
Û·
25 I C (A) 30
0
0
25
50
75
100
125 R G ( Ω ) 150
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/150 °C
600
V
±15
V
15
A
IGBT
E_rec
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
1,2
IGBT
1
T_j = T_jmax -25°C
E_rec
0,8
0,6
E_rec
0,4
0,2
T_j = 25°C
E_rec
25 I C (A) 30
0
0
25
50
75
100
125 R G ( Ω ) 150
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
I_C =
15
A
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5
Revision: 4.1