V23990-K200-A40-PM Datasheet, PDF (6/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K200-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
t_f
0,1
t_don
IGBT
t_doff
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
0,1
t_r
0,01
0,01
IGBT
t_don
t_f
t_r
0,001
0
5
10
15
20
With an inductive load at
T_j =
150
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
32
Û·
R_goff =
32
Û·
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
0,8
T_j = T_jmax -25°C
0,6
0,4
T_j = 25°C
0,2
25 I C (A) 30
0,001
0
25
50
75
100
125 R G ( Ω ) 150
With an inductive load at
T_j =
150
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
15
A
FWD
t_rr
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,8
T_j = T_jmax -25°C
0,6
t_rr
0,4
0,2
T_j = 25°C
FWD
t_rr
t_rr
0
0
5
10
15
20
25 I C (A) 30
0
0
25
50
75
100
125
150
R g on ( Ω )
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
32
Û·
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
15
A
±15
V
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6
Revision: 4.1