V23990-K200-A40-PM Datasheet, PDF (3/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K200-A40-PM
Parameter
D8,D9,D10,D11,D12,D13
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
PTC
Rated resistance
Deviation of R100
R100
A-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_F
V_to
r_t
I_r
R_thJH
Thermal grease
thickness≤50Ǒm
λ=1 W/mK
25
25
25
1500
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,51
1,42
V
0,86
0,79
V
0,03
0,03
Û·
0,05
mA
1,5
K/W
V_GE(th) V_CE=V_GE
V_CE(sat)
15
I_CES
0
I_GES
20
R_gint
t_d(on)
t_r
t_{d(off) Rgoff=32Û·}
±15
t_f
Rgon=32Û·
E_on
E_off
C_ies
C_oss f=1MHz
0
C_rss
Q_Gate Vcc=960V
15
R_thJH
Thermal grease
thickness≤50Ǒm
λ=1 W/mK
0,0005
Tj=25°C
Tj=150°C
5
5,8
6,5
V
15
Tj=25°C
1,6
2,2
2,5
Tj=150°C
2,48
V
1200
Tj=25°C
Tj=150°C
0,06
mA
0
Tj=25°C
Tj=150°C
180
nA
-
Û·
600
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
102
102
33
37
216
ns
284
90
133
0,99
1,53
0,9
mWs
1,47
900
25
Tj=25°C
80
pF
55
15
Tj=25°C
93
nC
1,3
K/W
V_F
15
I_RRM
t_rr
Q_rr Rgoff=32Û·
±15
600
15
di(rec)max
/dt
Erec
R_thJH
Thermal grease
thickness≤50Ǒm
λ=1 W/mK
Tj=25°C
1,6
2,6
2,9
Tj=150°C
2,64
V
Tj=25°C
7,78
Tj=150°C
10,8
A
Tj=25°C
299
Tj=150°C
541
ns
Tj=25°C
0,98
Tj=150°C
2,33
µC
Tj=25°C
Tj=150°C
73
47
A/µs
Tj=25°C
Tj=150°C
0,38
0,97
mWs
1,92
K/W
R
∆R/R R100=1670 ۷
R
B(25/50) Tol. %
B(25/100) Tol. %
T=25°C
1000
Û·
T=100°C
-3
3
%
T=100°C
1670,313
Û·
T=25°C
7,635*10-3
1/K
T=25°C
1,731*10-5
1/K²
E
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Revision: 4.1