70-W224NIA400SH-M400P Datasheet, PDF (8/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W224NIA400SH-M400P
datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
50
Buck T1,T4 / D5,D6
Buck IGBT and Buck FWD
IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
140
E_{off High T}
120
40
100
30
E_{on High T}
80
E_{off Low T}
60
20
E_{on Low T}
40
10
20
0
0
200
400
600
800
I C (A) ¹⁰⁰⁰
0
0
2
4
6
With an inductive load at
T_j =
25/125 °C
V_CE =
600
V
V_GE =
±15
V
R_gon =
1
Ω
R_goff =
1
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
600
V
V_GE =
±15
V
I_C =
398
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
40
32
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
40
32
24
24
E_{rec Low T}
16
16
8
8
0
0
0
200
400
600
800
I C (A) 1000
0
2
4
6
With an inductive load at
T_j =
25/125 °C
V_CE =
600
V
V_GE =
±15
V
R_gon =
1,0
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
600
V
V_GE =
±15
V
I_C =
398
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
8
10
R G ( Ω)
FWD
E_{rec High T}
E_{rec Low T}
8
10
R G ( Ω)
copyright Vincotech
8
14 Jul 2015 / Revision 4