70-W224NIA400SH-M400P Datasheet, PDF (17/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

70-W224NIA400SH-M400P
datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
100
80
Boost T2,T3 / D2,D3
Boost IGBT and Boost FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
100
Q_{rr High T}
80
60
60
Q_{rr Low T}
40
40
20
0
0
At
200
400
600
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
600
V
±15
V
1,0
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
500
400
20
800 I _C (A) 1000
0
0
2
4
6
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
600
V
398
A
±15
V
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
500
400
FWD
Q_{rr High T}
Q_{rr Low T}
8
R gon ( Ω) ¹⁰
FWD
300
300
I_{RRM High T}
200
200
I_{RRM Low T}
100
100
0
0
0
200
400
600
800
I C (A) ¹⁰⁰⁰
0
2
4
6
8
R gon ( Ω) ¹⁰
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
600
V
±15
V
1,0
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
600
V
398
A
±15
V
copyright Vincotech
17
14 Jul 2015 / Revision 4