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| 70-W224NIA400SH-M400P Datasheet, PDF (18/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance | |||
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70-W224NIA400SH-M400P
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
15000
dIrec/dt T
di0/dt T
12000
Boost T2,T3 / D2,D3
Boost IGBT and Boost FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
15000
dI0/dt T
dIrec/dt T
12000
FWD
9000
6000
3000
0
0
200
400
600
At
Tj =
VCE =
VGE =
Rgon =
255//112255 °C
600
V
±15
V
1,0
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
9000
6000
3000
800 I C (A)
1000
IGBT
0
0
2
4
6
At
Tj =
VR =
IF =
VGE =
255//112255 °C
600
V
398
A
±15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
8
R gon ( â¦) 10
FWD
10-1
10-1
10-2
10-3
10-5
At
D=
RthJH =
10-4
10-3
tp / T
0,112
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
102
100
t p (s) 101
RthJC =
0,074
IGBT thermal model values
With thermal grease
With phase change material
R (K/W) Tau (s)
R (K/W) Tau (s)
0,012
6,352
0,012
6,352
0,048
1,766
0,046
1,766
0,021
0,394
0,020
0,394
0,013
0,087
0,013
0,087
0,020
0,019
0,019
0,019
0,002
0,002
0,002
0,002
10-2
10-3
10-5
At
D=
RthJH =
10-4
10-3
tp / T
0,204
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s) 101 10
RthJC =
0,135
FWD thermal model values
With thermal grease
With phase change material
R (K/W) Tau (s)
R (K/W) Tau (s)
0,021
5,238
0,020
5,238
0,067
1,193
0,065
1,193
0,048
0,295
0,047
0,295
0,055
0,030
0,053
0,030
0,012
0,008
0,012
0,008
0,007
0,001
0,006
0,001
copyright Vincotech
18
14 Jul 2015 / Revision 4
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