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| 70-W224NIA400SH-M400P Datasheet, PDF (11/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance | |||
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70-W224NIA400SH-M400P
datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
20000
dIrec/dt T
dIo/dt T
16000
12000
8000
4000
0
0
200
400
600
At
Tj =
VCE =
VGE =
Rgon =
255//112255 °C
600
V
±15
V
1,0
â¦
Buck T1,T4 / D5,D6
Buck IGBT and Buck FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
28000
24000
dI0/dt T
dIrec/dt T
FWD
20000
16000
12000
8000
4000
800 I C (A) 1000
0
0
2
4
6
8
R gon ( â¦) 10
At
Tj =
VR =
IF =
VGE =
255//112255 °C
600
V
398
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
FWD
10-1
10-1
10-2
10-3
10-5
At
D=
RthJH =
10-4
tp / T
0,105
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s)
101
RthJC =
0,069
K/W
IGBT thermal model values
With thermal grease
With phase change material
R (K/W) Tau (s)
R (K/W) Tau (s)
0,011
5,238
0,010
5,238
0,034
1,193
0,033
1,193
0,025
0,295
0,024
0,295
0,028
0,030
0,027
0,030
0,006
0,008
0,006
0,008
0,003
0,001
0,003
0,001
10-2
10-3
10-5
At
D=
RthJH =
10-4
10-3
tp / T
0,163
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s) 101 1
RthJC =
0,108
K/W
FWD thermal model values
With thermal grease
With phase change material
R (K/W) Tau (s)
R (K/W) Tau (s)
0,018
7,434
0,018
7,434
0,031
1,592
0,030
1,592
0,032
0,290
0,031
0,290
0,043
0,063
0,042
0,063
0,033
0,020
0,032
0,020
0,010
0,002
0,010
0,002
copyright Vincotech
11
14 Jul 2015 / Revision 4
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