70-W224NIA400SH-M400P Datasheet, PDF (16/32 Pages) Vincotech – Snubber diode for optional asymmetrical inductance

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
0,1
0,01
70-W224NIA400SH-M400P
datasheet
Boost T2,T3 / D2,D3
Boost IGBT and Boost FWD
IGBT
t_doff
t_don
t_f
t_r
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0,1
IGBT
t_doff
t_don
t_r
t_f
0,01
0,001
0
200
400
600
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
R_gon =
1,0
Ω
R_goff =
1,0
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,8
0,6
0,4
0,2
0,001
800
1000
I C (A)
0
2
4
6
With an inductive load at
T_j =
125
°C
V_CE =
600
V
V_GE =
±15
V
I_C =
398
A
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,8
0,6
t_{rr High T}
0,4
t_{rr Low T}
0,2
8
10
RG(Ω )
FWD
t_{rr High T}
t_{rr Low T}
0,0
0
0
200
400
600
800 _{I C (A)} 1000
0
2
4
6
8
R gon ( Ω) ¹⁰
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
600
V
±15
V
1,0
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
600
V
398
A
±15
V
copyright Vincotech
16
14 Jul 2015 / Revision 4