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| 10-PZ06NBA041FS-P915L68Y Datasheet, PDF (8/17 Pages) Vincotech – High efficiency symmetric boost | |||
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INPUT BOOST
10-PZ06NBA041FS-P915L68Y
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
3000
2500
2000
1500
1000
500
0
0
5
10
15
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
400
V
+10/0
V
8
â¦
Figure 19
MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
BOOST FWD
dIrec/dtLow T
dIrec/dtHigh T
di0/dtLow T
di0/dtHigh T
20
25 I C (A) 30
dI0/dt
dIrec/dt
BOOST MOSFET
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
8000
7000
6000
dIrec/dtLow T
5000
4000
3000
2000
1000
dI0/dtHigh T
0
0
8
16
24
At
Tj =
VR =
IF =
VGS =
25/125 °C
400
V
15
A
+10/0
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
BOOST FWD
dIrec/dtHigh T
dI0/dtLow T
32
R Gon ( Ω) 40
dI0/dt
dIrec/dt
BOOST FWD
100
100
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
0,72
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
MOSFET thermal model values
R (C/W)
0,019
0,106
0,352
0,164
0,049
0,031
Tau (s)
8,77E+00
1,31E+00
2,19E-01
6,50E-02
1,06E-02
7,41E-04
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
1,69
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s)
1011
FWD thermal model values
R (C/W)
0,05
0,17
0,59
0,47
0,33
0,07
Tau (s)
5,64E+00
6,62E-01
1,18E-01
2,15E-02
3,58E-03
5,72E-04
Copyright by Vincotech
8
Revision: 1
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