10-PZ06NBA041FS-P915L68Y Datasheet, PDF (5/17 Pages) Vincotech – High efficiency symmetric boost

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
0,4
0,3
0,2
0,1
INPUT BOOST
10-PZ06NBA041FS-P915L68Y
preliminary datasheet
BOOST MOSFET
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0,4
0,3
E_{on High T}
E_{on Low T}
0,2
E_{off High T}
E_{off Low T}
0,1
BOOST MOSFET
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0,0
0
5
10
15
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
+10/0
V
R_gon =
8
Ω
R_goff =
8
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0,05
20
25 I _C (A) 30
BOOST MOSFET
0,04
E_{rec High T}
0,03
0,02
E_{rec Low T}
0,01
0,0
0
8
16
24
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
+10/0
V
I_D =
15
A
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,04
0,03
0,02
0,01
32 ^R G ^{( Ω )} 40
BOOST MOSFET
E_{rec High T}
E_{rec Low T}
0
0
0
5
10
15
20
25 _{I C (A)} 30
0
8
16
24
32 R _G ( Ω ) 40
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
+10/0
V
R_gon =
8
Ω
R_goff =
8
Ω
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
+10/0
V
I_D =
15
A
Copyright by Vincotech
5
Revision: 1