10-PZ06NBA041FS-P915L68Y Datasheet, PDF (7/17 Pages) Vincotech – High efficiency symmetric boost

INPUT BOOST
10-PZ06NBA041FS-P915L68Y
preliminary datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0,2
BOOST FWD
Figure 14
Typical reverse recovery charge as a
function of MOSFET turn on gate resistor
Q_rr = f(R_gon)
0,15
0,16
0,12
Q_{rr High T}
0,12
0,09
Q_{rr Low T}
0,08
0,06
0,04
0,03
0
0
At ⁰
5
10
15
20
25 I C (A) 30
0
8
16
24
At
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
400
V
+10/0
V
8
Ω
Tj =
VR =
IF =
VGS =
25/125 °C
400
V
15
A
+10/0
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
10
8
6
4
2
0
0
5
10
15
20
At
T_j =
V_DS =
V_GS =
R_gon =
25/125 °C
400
V
+10/0
V
8
Ω
BOOST FWD
I_{RRM Low T}
I_{RRM High T}
25 I C (A) 30
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
21
18
15
12
9
6
3
0
0
8
16
24
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
15
A
+10/0
V
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
32 R Gon ( Ω) 40
BOOST FWD
I_{RRM Low T}
I_{RRM High T}
32 R Gon ( Ω ) 40
Copyright by Vincotech
7
Revision: 1