10-PZ06NBA041FS-P915L68Y Datasheet, PDF (4/17 Pages) Vincotech – High efficiency symmetric boost

INPUT BOOST
10-PZ06NBA041FS-P915L68Y
preliminary datasheet
Figure 1
Typical output characteristics
I_D = f(V_DS)
100
BOOST MOSFET
Figure 2
Typical output characteristics
I_D = f(V_DS)
100
BOOST MOSFET
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
At
1
2
3
4
5
6
7 _{V CE (V)} 8
t_p =
250
μs
T_j =
25
°C
V_DS from 3 V to 13 V in steps of 1 V
0
0
At
1
2
3
4
5
6
7 _{V CE (V)} 8
t_p =
250
μs
T_j =
125
°C
V_DS from 3 V to 13 V in steps of 1 V
Figure 3
Typical transfer characteristics
I_D = f(V_DS)
20
16
12
BOOST MOSFET
T_j = T_jmax-25°C
T_j = 25°C
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
50
40
T_j = 25°C
30
BOOST FWD
T_j = T_jmax-25°C
8
20
4
10
0
0
0
1
2
3
4
5
V GS (V) 6
0
1
2
3
4
V F (V) ⁵
At
t_p =
250
μs
V_DS =
10
V
At
t_p =
250
μs
Copyright by Vincotech
4
Revision: 1