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| 10-PZ06NBA041FS-P915L68Y Datasheet, PDF (10/17 Pages) Vincotech – High efficiency symmetric boost | |||
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INPUT BOOST
10-PZ06NBA041FS-P915L68Y
preliminary datasheet
Figure 25
Safe operating area as a function
of drain-source voltage
ID = f(VDS)
103
10mS
102
BOOST MOSFET
100uS
1mS
100mS
DC
101
100
100
At
D=
Th =
VGS =
Tj =
101
single pulse
80
ºC
+10/0
V
Tjmax
ºC
102
V DS (V)
103
Figure 26
Gate voltage vs Gate charge
VGS = f(Qg)
8
7
6
5
4
3
2
1
0
0
At
ID =
50
100
15
A
BOOST MOSFET
120V
480V
150
200
250
Qg (nC)
Copyright by Vincotech
10
Revision: 1
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