10-FZ12NMA080NS03-M260F38 Datasheet, PDF (8/27 Pages) Vincotech – Mixed voltage component topology

10-FZ12NMA080NS03-M260F38
10-PZ12NMA080NS03-M260F38Y
target datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 13
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
FWD
4
2,5
3
Q_{rr High T}
2
Q_{rr High T}
1,5
2
Q_{rr Low T}
Q_{rr Low T}
1
1
0,5
0
0
At
20
40
60
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
350
V
±15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
100
0
80
I C (A) 100
0
5
10
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
350
V
56
A
±15
V
15
R gon ( Ω )
20
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
100
FWD
80
I_{RRM High T}
60
I_{RRM Low T}
40
20
80
60
40
I_{RRM High T}
I_{RRM Low T}
20
0
0
0
20
40
60
80
I C (A) 100
0
5
10
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
350
V
±15
V
4
Ω
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
350
V
56
A
±15
V
15
R gon ( Ω)
20
copyright Vincotech
8
17 Sep. 2015 / Revision 2