10-FZ12NMA080NS03-M260F38 Datasheet, PDF (6/27 Pages) Vincotech – Mixed voltage component topology

Figure 5
Typical switching energy losses
as a function of collector current
E = f(I _C)
2,5
2,0
1,5
1,0
0,5
10-FZ12NMA080NS03-M260F38
10-PZ12NMA080NS03-M260F38Y
target datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
IGBT
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
2,5
2,0
1,5
E_{off Low T}
E_{on High T}
1,0
E_{on Low T}
0,5
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0,0
0
20
40
60
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
0,8
0,6
0,4
0,2
0,0
0
20
40
60
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
R _gon =
4
Ω
80
I C (A) 100
0,0
0
5
10
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
I_C =
56
A
15
R G ( Ω) 20
FWD
E_{rec High T}
E_{rec Low T}
80
I C (A) ¹⁰⁰
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0
5
10
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
I_C =
56
A
FWD
E_{rec High T}
E_{rec Low T}
15
R G ( Ω)
20
copyright Vincotech
6
17 Sep. 2015 / Revision 2