10-FZ12NMA080NS03-M260F38 Datasheet, PDF (3/27 Pages) Vincotech – Mixed voltage component topology

Parameter
Half Bridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Neutral Point FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
10-FZ12NMA080NS03-M260F38
10-PZ12NMA080NS03-M260F38Y
target datasheet
Characteristic Values
Symbol
Conditions
V _GE [V]
or
V _GS [V]
V _r [V]
or
V _CE [V]
or
V _DS [V]
I _C [A]
or
I _F [A]
or
I _D [A]
T _j [°C]
Value
Unit
Min Typ Max
V _GE(th)
V _CEsat
I _CES
I _GES
R _gint
t _d(on)
t_r
t _d(off)
t_f
E _on
E _off
C _ies
C _oss
C _rss
Q_G
R _th(j-s)
V CE=V GE
15
0
20
R goff=4 Ω
R gon=4 Ω
±15
f=1MHz
0
15
Thermal grease
thickness≤50um
λ = 1 W/mK
1200
0
350
25
0,0006
25
125
80
25
125
25
125
25
125
25
125
25
125
25
56
125
25
125
25
125
25
125
25
600
80
25
4,5
5,5
6,5
V
2,02
V
2,17
2
mA
400
nA
none
113
113
15
17
128
149
28
45
0,41
0,68
0,73
1,36
15000
Ω
ns
mWs
400
pF
280
626
nC
0,85
K/W
V_F
I _RRM
t _rr
Q _rr
R gon=4 Ω
( di _rf/dt )_max
E _rec
75
25
125
25
125
25
125
±15
350
56
25
125
25
125
25
125
R _th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
2,15
2,36
72
74
40
79
1
2
5066
3825
0,32
0,53
1,6
V
A
ns
µC
A/µs
mWs
K/W
copyright Vincotech
3
17 Sep. 2015 / Revision 2